Hermetic chip scale packaging means and method including self test

ABSTRACT

An integrated circuit chip and method of manufacturing the same which includes the use of a wafer cap having depressions therein for aligning with micro-electro-mechanical systems included in said integrated circuit when said cap is placed over a wafer containing numerous integrated circuits, the wafer is then cut, after the wafer cap is bound to the wafer. The wafer cap may also include a piezo-resistive element thereon for measuring pressure around the hermetically sealed MEMS.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to integrated circuit (IC) chips, and more particularly relates to such chips having micro-electro-mechanical-systems (MEMS) included thereon, and even more particularly relates to hermetic packaging of such MEMS.

[0002] In the past, MEMS have been included on chips for numerous reasons, and MEMS have provided much functionality.

[0003] While use of the MEMS on chips has some beneficial aspects, it does have serious drawbacks. The MEMS become damaged during conventional wafer processing steps and as a result, they are typically bonded to a chip individually at the chip level. This chip level processing of MEMS is time consuming and relatively expensive.

[0004] Consequently, there exists a need for improved IC chips having MEMS thereon and for improved methods of manufacturing the same.

SUMMARY OF THE INVENTION

[0005] It is an object of the present invention to provide an improved hermetic MEMS chip package.

[0006] It is a feature of the present invention to include a hermetic cap bonded to a wafer containing numerous chips with MEMS thereon.

[0007] It is an advantage of the present invention to eliminate the need for capping of MEMS individually at the chip level.

[0008] It is another object of the present invention to provide for self-test capability of MEMS.

[0009] It is another feature of the present invention to include piezo-resistive pressure sensor for sensing pressure around the MEMS.

[0010] It is another advantage of the present invention to sense a pressure change as a result of a hermetic packaging failure.

[0011] The present invention is a hermetic MEMS chip package and method for processing the same, which is designed to satisfy the aforementioned needs, provide the previously stated objects, include the above-listed features and achieve the already articulated advantages.

[0012] Accordingly, the present invention is a hermetic MEMS chip package and method which includes providing a hermetic cap over a wafer containing numerous MEMS chips thereon.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The invention may be more fully understood by reading the foregoing description of the preferred embodiments of the invention in conjunction with the appended drawings wherein:

[0014]FIG. 1 is a simplified cross-sectional diagram of a hermetic MEMS chip level package of the present invention, which includes an enlarged MEMS cavity in which MEMS may be disposed.

[0015]FIG. 2 is a simplified cross-sectional diagram of a hermetic MEMS chip level package of the present invention, which does not include an enlarged MEMS cavity in which MEMS may be disposed.

[0016]FIG. 3 is a top view of a MEMS chip, of the present invention, which shows piezo-resistive elements disposed thereon.

DETAILED DESCRIPTION

[0017] Now referring to the drawings, wherein like numerals refer to like matter throughout, and more particularly to FIG. 1, there is shown a MEMS chip package 100, of the present invention, which includes a MEMS chip base die 102, which is any type of die which is well known in the art. Disposed on top of MEMS chip base die 102 is MEMS hermetic cap 104, which is a portion of a wafer cap which is milled or etched or otherwise made to have cavities therein for enclosing MEMS disposed on a wafer having many chips thereon. MEMS hermetic cap 104 is coupled to MEMS chip base die 102 by a glass bond or other known technique. Disposed between MEMS chip base die 102 and MEMS hermetic cap 104 is enlarged MEMS cavity 106 which is enlarged by cavities or depressions in MEMS hermetic cap 104 to facilitate coverage of MEMS. MEMS hermetic cap 104 has a thick region 112 and a thin region 114. The thin region 114 corresponds to a depression or cavity in MEMS hermetic cap 104 and is preferably disposed over a high profile MEMS 118.

[0018] Now referring to FIG. 2, there is shown an alternate MEMS chip package 200, of the present invention which includes a MEMS chip base die 102 and a flat MEMS hermetic cap 204, which does not have any depressions or cavities therein. Flat MEMS hermetic cap 204 is coupled to MEMS chip base die 102 by bonding material 108. Flat MEMS cavity 206 does not have an enlarged area therein for covering larger MEMS. Low profile MEMS 218 is shown disposed in flat MEMS cavity 206.

[0019] Now referring to FIG. 3, there is shown a Self test MEMS chip package 300, of the present invention, which includes a MEMS chip base die 102, a MEMS hermetic cap 104 and several piezo-resistive elements 310. Piezo-resistive elements 310 are shown disposed over the MEMS hermetic cap 104 and are capable of measuring deflections in MEMS hermetic cap 104 which are result of failures of the Self test MEMS chip package 300 to maintain a hermetic seal and bond. Piezo-resistive elements 310 are known in the art and have been used for various sensing needs, including use as an accelerometer, such as that described in U.S. Pat. No. 4,430,895, entitled Piezoresistive Accelerometer, by Russell F. Colton.

[0020] In operation, the method of the present invention includes the steps of providing a wafer having numerous integrated circuits thereon. The integrated circuits having MEMS devices incorporated therein. Providing a MEMS hermetic cap 104 with depressions therein for location over the MEMS devices. Bonding the MEMS hermetic cap 104 to the wafer using low temperature glass bonding or other known techniques. The bonding process will include creating an independent hermetic bond around the various MEMS devices. Sawing the wafer into numerous individual MEMS chip packages 100. The MEMS hermetic cap 104 may have disposed thereon piezo-resistive elements 310. Alternatively, piezo-resistive elements 310 may be added after MEMS hermetic cap 104 is bound to the wafer and before or after the wafer is cut into individual integrated circuits.

[0021] It is thought that the method and apparatus of the present invention will be understood from the foregoing description and that it will be apparent that various changes may be made in the form, construction, steps and arrangements of the parts and steps thereof, without departing from the spirit and scope of the invention or sacrificing all of their material advantages. The form herein described is merely a preferred or exemplary embodiment thereof. 

We claim:
 1. An integrated circuit chip package of the type having a MEMS, the package comprising: a MEMS chip base die; a MEMS disposed on MEMS chip base die; a MEMS hermetic cap disposed over said MEMS and bound to said MEMS chip base die, wherein said MEMS chip base die and MEMS hermetic cap are portions of a wafer and wafer cap, respectively, which are cut into individual packages after said wafer and said wafer cap are bound together.
 2. A package of claim 1 further comprising a pressure sensing element disposed on said MEMS hermetic cap for sensing deflection of said MEMS hermetic cap as a result of a failure of a hermetic seal between said MEMS chip base die and said MEMS hermetic cap.
 3. A package of claim 2 wherein said MEMS hermetic cap has depressions therein which are aligned with said MEMS on said MEMS chip base die after said MEMS hermetic cap is bonded to said MEMS chip base die.
 4. A package of claim 3 wherein said MEMS has a height dimension, measured with respect to said MEMS chip base die which is greater than a height dimension of a bonding material disposed between said MEMS chip base die and said MEMS hermetic cap.
 5. A package of claim 4 further comprising a self-test circuit coupled to said pressure sensing element.
 6. A package of claim 2 wherein said pressure sensing element is a piezo-resistive element.
 7. A package of claim 4 wherein said bonding material is a glass bonding material.
 8. A package of claim 3 wherein said depressions are micro-machined cavities.
 9. A package of claim 8 wherein said MEMS hermetic cap has a thin section and a thick section, wherein said thin section is associated with said depressions.
 10. A package of claim 9 wherein said pressure sensing element is disposed on said MEMS hermetic cap at said thin section.
 11. A chip package comprising: means for providing structural support to a plurality of circuit components; means for providing microscopic electro-mechanical functions, coupled to said means for providing structural support; means for encapsulating said means for providing microscopic electromechanical functions; and, means for sensing a failure of a bond between said means for providing structural support and said means for encapsulating.
 12. A package of claim 11 wherein said means for sensing is a piezo-resistive pressure sensing element.
 13. A package of claim 12 wherein said means for encapsulating is bound to said means for providing structural support, while said means for providing structural support is a portion of a wafer containing other circuits thereon.
 14. A package of claim 13 wherein said means for encapsulating has a depression therein for allowing clearance with said means for providing microscopic electromechanical functions, when said means for encapsulating is bound to said means for providing structural support.
 15. A package of claim 14 further comprising a means for testing an integrity characteristic of a bond between said means for encapsulating and said means for providing structural support.
 16. A package of claim 15 wherein said means for testing includes a comparator.
 17. A method of manufacturing an integrated circuit chip, comprising the steps of: providing a wafer base; providing a plurality of integrated circuits on said wafer base; providing a wafer cap extending over a plurality of said integrated circuits; bonding said wafer cap to said wafer base; and, separating said integrated circuits.
 18. A method of claim 17 wherein said integrated circuits include a MEMS.
 19. A method of claim 18 wherein said bonding said wafer cap to said wafer base uses a glass bonding process.
 20. A method of claim 19 further comprising the step of providing a piezo-resistive pressure element on said wafer cap for measuring a pressure characteristic of a void between a portion of said wafer and a portion of said wafer cap. 